Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors
نویسندگان
چکیده
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation of the lateral NWTs as new sources of process variability.
منابع مشابه
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تاریخ انتشار 2017